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fn3076 rev 15.00 page 1 of 14 august 11, 2015 fn3076 rev 15.00 august 11, 2015 HFA3046, hfa3096, hfa3127, hfa3128 ultra high frequency transistor arrays datasheet the HFA3046, hfa3096, hfa 3127 and the hfa3128 are ultra high frequency transistor arrays that are fabricated from intersil corporations co mplementary bipolar uhf-1 process. each array consists o f five dielectrically isolated transistors on a common monolithic substrate. the npn transistors exhibit a f t of 8ghz while the pnp transistors provide a f t of 5.5ghz. both types exhibit low noise (3.5db), making them ideal for high frequency amplifier and mixer applications. the HFA3046 and hfa3127 are all npn arrays while the hfa3128 has all pnp transis tors. the hfa3096 is an npn-pnp combination. access is provided to each of the terminals for the individual transistors for maximum application flexibility. monolithic construction of these transistor arrays provides c lose electrical and thermal matching of the five transistors. intersil provides an application note illustratin g the use of these devices as rf amplifiers . for more information, visit our website at www.intersil.com. features ? npn transistor (f t ) . . . . . . . . . . . . . . . . . . . . . . . . . 8ghz ? npn current gain (h fe ). . . . . . . . . . . . . . . . . . . . . . . . 130 ? npn early voltage (v a ) . . . . . . . . . . . . . . . . . . . . . . . 50v ? pnp transistor (f t ). . . . . . . . . . . . . . . . . . . . . . . . . 5.5ghz ? pnp current gain (h fe ). . . . . . . . . . . . . . . . . . . . . . . . . 60 ? pnp early voltage (v a ) . . . . . . . . . . . . . . . . . . . . . . . .20v ? noise figure (50 ? ) at 1.0ghz . . . . . . . . . . . . . . . . . 3.5db ? collector to collector leakage . . . . . . . . . . . . . . . . . .<1pa ? complete isolation between transistors ? pin compatible with indust ry standard 3xxx series arrays ? pb-free (rohs compliant) applications ? vhf/uhf amplifiers ? vhf/uhf mixers ? if converters ? synchronous detectors ordering information part number (note) part marking temp. range (c) package (pb-free) pkg. dwg. # HFA3046bz HFA3046bz -55 to +125 14 ld soic m14.15 hfa3096bz* hfa3096bz -55 to +125 16 ld soic m16.15 hfa3127bz* hfa3127bz -55 to +125 16 ld soic m16.15 hfa3127rz* 127z -55 to +125 16 ld 3x3 qfn l16.3x3 hfa3128bz (no longer available or supported) hfa3128bz -55 to +125 16 ld soic m16.15 hfa3128rz (no longer available or supported) 128z -55 to +125 16 ld 3x3 qfn l16.3x3 *add 96 suffix for tape and reel. note: these intersil pb-free plastic packaged products employ sp ecial pb-free material sets, molding compounds/die attach mater ials, and 100% matte tin plate plus anneal (e3 termination finish, which is ro hs compliant and compatible with both snpb and pb-free solderin g operations). intersil pb-free products are msl classified at pb-free peak re flow temperatures that meet or exceed the pb-free requirements of ipc/jedec j std-020.
HFA3046, hfa3096, hfa3127, hfa3128 fn3076 rev 15.00 page 2 of 14 august 11, 2015 pinouts HFA3046 (14 ld soic) top view hfa3096 (16 ld soic) top view hfa3127 (16 ld soic) top view hfa3128 (16 ld soic) top view hfa3127, hfa3128 (16 ld 3x3 qfn) top view 1 2 3 4 5 6 7 14 13 12 11 10 9 8 q 1 q 2 q 3 q 4 q 5 14 15 16 9 13 12 11 10 1 2 3 4 5 7 6 8 q 1 nc q 3 q 4 q 2 q 5 14 15 16 9 13 12 11 10 1 2 3 4 5 7 6 8 q 1 q 2 q 3 q 4 nc q 5 14 15 16 9 13 12 11 10 1 2 3 4 5 7 6 8 q 1 q 2 q 3 q 4 nc q 5 1 3 4 15 q2e q2b nc q3c q2c q1c q1e q1b 16 14 13 2 12 10 9 11 6 578 q5b q5e q5c q4c q3e q3b q4b q4e
HFA3046, hfa3096, hfa3127, hfa3128 fn3076 rev 15.00 page 3 of 14 august 11, 2015 absolute maximum ratings thermal information collector to emitter voltage (open base) . . . . . . . . . . . . . . . . . . 8v collector to base volt age (open emitter) . . . . . . . . . . . . . . . . . 12v emitter to base voltage (reverse bias). . . . . . . . . . . . . . . . . . . 5.5v collector current (100% duty cycle) . . . . . 18.5ma at t j = +150c 34ma at t j = +125c 37ma at t j = +110c peak collector current (any condition). . . . . . . . . . . . . . . . . . 65ma operating information temperature range . . . . . . . . . . . . . . . . . . . . . . . . -55c to +125c thermal resistance (typical) ? ja (c/w) ? jc (c/w) 14 ld soic package (note 1) . . . . . . . 120 n/a 16 ld soic package (note 1) . . . . . . . 115 n/a qfn package (notes 2, 3). . . . . . . . . . 57 10 maximum power dissipati on (any one transistor) . . . . . . . . 0.15w maximum junction temperature (die) . . . . . . . . . . . . . . . . . . +175c maximum junction temperatur e (plastic package) . . . . . . +1 50c maximum storage temperature range . . . . . . . . . -65c to +1 50c pb-free reflow profilesee link below http://www.intersil.com/pbfree/pb-freereflow.asp caution: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. notes: 1. ? ja is measured with the component mounted on an evaluation pc boa rd in free air. 2. for ? jc , the case temp location is the center of the exposed metal p ad on the package underside. 3. ? ja is measured with the component mounted on a high effective the rmal conductivity test board in free air. see tech brief tb379 for details. electrical specifications t a = +25c parameter test conditions die soic, qfn units min typ max min typ max dc npn characteristics collector to base breakdown voltage, v (br)cbo i c = 100a, i e = 0 12 18 - 12 18 - v collector to emitter breakdown voltage, v (br)ceo i c = 100a, i b = 0 8 12 - 8 12 - v collector to emitter breakdown voltage, v (br)ces i c = 100a, base shorted to emitter 10 20 - 10 20 - v emitter to base breakdown voltage, v (br)ebo i e = 10a, i c = 0 5.5 6 - 5.5 6 - v collector-cutoff-current, i ceo v ce = 6v, i b = 0 - 2 100 - 2 100 na collector-cutoff-current, i cbo v cb = 8v, i e = 0 - 0.1 10 - 0.1 10 na collector to emitter saturation voltage, v ce(sat) i c = 10ma, i b = 1ma - 0.3 0.5 - 0.3 0.5 v base to emitter voltage, v be i c = 10ma - 0.85 0.95 - 0.85 0.95 v dc forward-current transfer ratio, h fe i c = 10ma, v ce = 2v 40 130 - 40 130 - early voltage, v a i c = 1ma, v ce = 3.5v 20 50 - 20 50 - v base to emitter voltage drift i c = 10ma - -1.5 - - -1.5 - mv/c collector to collector leakage - 1 - - 1 - pa electrical specifications t a = +25c parameter test conditions die soic, qfn units min typ max min typ max dynamic npn characteristics noise figure f = 1.0ghz, v ce = 5v, i c = 5ma, z s = 50 ? - 3.5 - - 3.5 - db f t current gain-bandwidth product i c = 1ma, v ce = 5v - 5.5 - - 5.5 - ghz i c = 10ma, v ce = 5v - 8 - - 8 - ghz
HFA3046, hfa3096, hfa3127, hfa3128 fn3076 rev 15.00 page 4 of 14 august 11, 2015 power gain-bandwidth product, f max i c = 10ma, v ce = 5v - 6 - - 2.5 - ghz base to emitter capacitance v be = -3v - 200 - - 500 - ff collector to base capacitance v cb = 3v - 200 - - 500 - ff electrical specifications t a = +25c (continued) parameter test conditions die soic, qfn units min typ max min typ max electrical specifications t a = +25c parameter test conditions die soic, qfn units min typ max min typ max dc pnp characteristics collector to base breakdown voltage, v (br)cbo i c = -100a, i e = 0 10 15 - 10 15 - v collector to emitter breakdown voltage, v (br)ceo i c = -100a, i b = 0 8 15 - 8 15 - v collector to emitter breakdown voltage, v (br)ces i c = -100a, base shorted to emitter 10 15 - 10 15 - v emitter to base breakdown voltage, v (br)ebo i e = -10a, i c = 0 4.5 5 - 4.5 5 - v collector cutoff current, i ceo v ce = -6v, i b = 0 - 2 100 - 2 100 na collector cutoff current, i cbo v cb = -8v, i e = 0 - 0.1 10 - 0.1 10 na collector to emitter saturation voltage, v ce(sat) i c = -10ma, i b = -1ma - 0.3 0.5 - 0.3 0.5 v base to emitter voltage, v be i c = -10ma - 0.85 0.95 - 0.85 0.95 v dc forward-current transfer ratio, h fe i c = -10ma, v ce = -2v 20 60 - 20 60 - early voltage, v a i c = -1ma, v ce = -3.5v 10 20 - 10 20 - v base to emitter voltage drift i c = -10ma - -1.5 - - -1.5 - mv/c collector to collector leakage - 1 - - 1 - pa electrical specifications t a = +25c parameter test conditions die soic, qfn units min typ max min typ max dynamic pnp characteristics noise figure f = 1.0ghz, v ce = -5v, i c = -5ma, z s = 50 ? - 3.5 - - 3.5 - db f t current gain-bandwidth product i c = -1ma, v ce = -5v - 2 - - 2 - ghz i c = -10ma, v ce = -5v - 5.5 - - 5.5 - ghz power gain-bandwidth product i c = -10ma, v ce = -5v - 3 - - 2 - ghz base to emitter capacitance v be = 3v - 200 - - 500 - ff collector to base capacitance v cb = -3v - 300 - - 600 - ff
HFA3046, hfa3096, hfa3127, hfa3128 fn3076 rev 15.00 page 5 of 14 august 11, 2015 differential pair matching characteristics for the HFA3046 input offset voltage i c = 10ma, v ce = 5v - 1.5 5.0 - 1.5 5.0 mv input offset current i c = 10ma, v ce = 5v - 5 25 - 5 25 a input offset voltage tc i c = 10ma, v ce = 5v - 0.5 - - 0.5 - v/c s-parameter and pspice model data is available from intersil sa les offices, and intersil corporations web site. electrical specifications t a = +25c (continued) parameter test conditions die soic, qfn units min typ max min typ max common emitter s-parameters of npn 3 m x 50 m transistor freq. (hz) |s 11 | phase(s 11 )|s 21 | phase(s 21 )|s 12 | phase(s 12 )|s 22 |phase(s 22 ) v ce = 5v and i c = 5ma 1.0e+08 0.83 -11.78 11.07 168.57 1.41e-02 78.88 0.97 -11.05 2.0e+08 0.79 -22.82 10.51 157.89 2.69e-02 68.63 0.93 -21.35 3.0e+08 0.73 -32.64 9.75 148.44 3.75e-02 59.58 0.86 -30.44 4.0e+08 0.67 -41.08 8.91 140.36 4.57e-02 51.90 0.79 -38.16 5.0e+08 0.61 -48.23 8.10 133.56 5.19e-02 45.50 0.73 -44.59 6.0e+08 0.55 -54.27 7.35 127.88 5.65e-02 40.21 0.67 -49.93 7.0e+08 0.50 -59.41 6.69 123.10 6.00e-02 35.82 0.62 -54.37 8.0e+08 0.46 -63.81 6.11 119.04 6.27e-02 32.15 0.57 -58.10 9.0e+08 0.42 -67.63 5.61 115.57 6.47e-02 29.07 0.53 -61.25 1.0e+09 0.39 -70.98 5.17 112.55 6.63e-02 26.45 0.50 -63.96 1.1e+09 0.36 -73.95 4.79 109.91 6.75e-02 24.19 0.47 -66.31 1.2e+09 0.34 -76.62 4.45 107.57 6.85e-02 22.24 0.45 -68.37 1.3e+09 0.32 -79.04 4.15 105.47 6.93e-02 20.53 0.43 -70.19 1.4e+09 0.30 -81.25 3.89 103.57 7.00e-02 19.02 0.41 -71.83 1.5e+09 0.28 -83.28 3.66 101.84 7.05e-02 17.69 0.40 -73.31 1.6e+09 0.27 -85.17 3.45 100.26 7.10e-02 16.49 0.39 -74.66 1.7e+09 0.25 -86.92 3.27 98.79 7.13e-02 15.41 0.38 -75.90 1.8e+09 0.24 -88.57 3.10 97.43 7.17e-02 14.43 0.37 -77.05 1.9e+09 0.23 -90.12 2.94 96.15 7.19e-02 13.54 0.36 -78.12 2.0e+09 0.22 -91.59 2.80 94.95 7.21e-02 12.73 0.35 -79.13 2.1e+09 0.21 -92.98 2.68 93.81 7.23e-02 11.98 0.35 -80.09 2.2e+09 0.20 -94.30 2.56 92.73 7.25e-02 11.29 0.34 -80.99 2.3e+09 0.20 -95.57 2.45 91.70 7.27e-02 10.64 0.34 -81.85 2.4e+09 0.19 -96.78 2.35 90.72 7.28e-02 10.05 0.33 -82.68 2.5e+09 0.18 -97.93 2.26 89.78 7.29e-02 9.49 0.33 -83.47 2.6e+09 0.18 -99.05 2.18 88.87 7.30e-02 8.96 0.33 -84.23 2.7e+09 0.17 -100.12 2.10 88.00 7.31e-02 8.47 0.33 -84.97 2.8e+09 0.17 -101.15 2.02 87.15 7.31e-02 8.01 0.33 -85.68 2.9e+09 0.16 -102.15 1.96 86.33 7.32e-02 7.57 0.33 -86.37 3.0e+09 0.16 -103.11 1.89 85.54 7.32e-02 7.16 0.33 -87.05
HFA3046, hfa3096, hfa3127, hfa3128 fn3076 rev 15.00 page 6 of 14 august 11, 2015 v ce = 5v and i c = 10ma 1.0e+08 0.72 -16.43 15.12 165.22 1.27e-02 75.41 0.95 -14.26 2.0e+08 0.67 -31.26 13.90 152.04 2.34e-02 62.89 0.88 -26.95 3.0e+08 0.60 -43.76 12.39 141.18 3.13e-02 52.58 0.79 -37.31 4.0e+08 0.53 -54.00 10.92 132.57 3.68e-02 44.50 0.70 -45.45 5.0e+08 0.47 -62.38 9.62 125.78 4.05e-02 38.23 0.63 -51.77 6.0e+08 0.42 -69.35 8.53 120.37 4.31e-02 33.34 0.57 -56.72 7.0e+08 0.37 -75.26 7.62 116.00 4.49e-02 29.47 0.51 -60.65 8.0e+08 0.34 -80.36 6.86 112.39 4.63e-02 26.37 0.47 -63.85 9.0e+08 0.31 -84.84 6.22 109.36 4.72e-02 23.84 0.44 -66.49 1.0e+09 0.29 -88.83 5.69 106.77 4.80e-02 21.75 0.41 -68.71 1.1e+09 0.27 -92.44 5.23 104.51 4.86e-02 20.00 0.39 -70.62 1.2e+09 0.25 -95.73 4.83 102.53 4.90e-02 18.52 0.37 -72.28 1.3e+09 0.24 -98.75 4.49 100.75 4.94e-02 17.25 0.35 -73.76 1.4e+09 0.22 -101.55 4.19 99.16 4.97e-02 16.15 0.34 -75.08 1.5e+09 0.21 -104.15 3.93 97.70 4.99e-02 15.19 0.33 -76.28 1.6e+09 0.20 -106.57 3.70 96.36 5.01e-02 14.34 0.32 -77.38 1.7e+09 0.20 -108.85 3.49 95.12 5.03e-02 13.60 0.31 -78.41 1.8e+09 0.19 -110.98 3.30 93.96 5.05e-02 12.94 0.31 -79.37 1.9e+09 0.18 -113.00 3.13 92.87 5.06e-02 12.34 0.30 -80.27 2.0e+09 0.18 -114.90 2.98 91.85 5.07e-02 11.81 0.30 -81.13 2.1e+09 0.17 -116.69 2.84 90.87 5.08e-02 11.33 0.30 -81.95 2.2e+09 0.17 -118.39 2.72 89.94 5.09e-02 10.89 0.29 -82.74 2.3e+09 0.16 -120.01 2.60 89.06 5.10e-02 10.50 0.29 -83.50 2.4e+09 0.16 -121.54 2.49 88.21 5.11e-02 10.13 0.29 -84.24 2.5e+09 0.16 -122.99 2.39 87.39 5.12e-02 9.80 0.29 -84.95 2.6e+09 0.15 -124.37 2.30 86.60 5.12e-02 9.49 0.29 -85.64 2.7e+09 0.15 -125.69 2.22 85.83 5.13e-02 9.21 0.29 -86.32 2.8e+09 0.15 -126.94 2.14 85.09 5.13e-02 8.95 0.29 -86.98 2.9e+09 0.15 -128.14 2.06 84.36 5.14e-02 8.71 0.29 -87.62 3.0e+09 0.14 -129.27 1.99 83.66 5.15e-02 8.49 0.29 -88.25 common emitter s-parameters of pnp 3 m x 50 m transistor freq. (hz) |s 11 | phase(s 11 )|s 21 | phase(s 21 )|s 12 | phase(s 12 )|s 22 |phase(s 22 ) v ce = -5v and i c = -5ma 1.0e+08 0.72 -16.65 10.11 166.77 1.66e-02 77.18 0.96 -10.76 2.0e+08 0.68 -32.12 9.44 154.69 3.10e-02 65.94 0.90 -20.38 3.0e+08 0.62 -45.73 8.57 144.40 4.23e-02 56.39 0.82 -28.25 4.0e+08 0.57 -57.39 7.68 135.95 5.05e-02 48.66 0.74 -34.31 5.0e+08 0.52 -67.32 6.86 129.11 5.64e-02 42.52 0.67 -38.81 common emitter s-parameters of npn 3 m x 50 m transistor (continued) freq. (hz) |s 11 | phase(s 11 )|s 21 | phase(s 21 )|s 12 | phase(s 12 )|s 22 |phase(s 22 )
HFA3046, hfa3096, hfa3127, hfa3128 fn3076 rev 15.00 page 7 of 14 august 11, 2015 6.0e+08 0.47 -75.83 6.14 123.55 6.07e-02 37.66 0.61 -42.10 7.0e+08 0.43 -83.18 5.53 118.98 6.37e-02 33.79 0.55 -44.47 8.0e+08 0.40 -89.60 5.01 115.17 6.60e-02 30.67 0.51 -46.15 9.0e+08 0.38 -95.26 4.56 111.94 6.77e-02 28.14 0.47 -47.33 1.0e+09 0.36 -100.29 4.18 109.17 6.91e-02 26.06 0.44 -48.15 1.1e+09 0.34 -104.80 3.86 106.76 7.01e-02 24.33 0.41 -48.69 1.2e+09 0.33 -108.86 3.58 104.63 7.09e-02 22.89 0.39 -49.05 1.3e+09 0.32 -112.53 3.33 102.72 7.16e-02 21.67 0.37 -49.26 1.4e+09 0.30 -115.86 3.12 101.01 7.22e-02 20.64 0.36 -49.38 1.5e+09 0.30 -118.90 2.92 99.44 7.27e-02 19.76 0.34 -49.43 1.6e+09 0.29 -121.69 2.75 98.01 7.32e-02 19.00 0.33 -49.44 1.7e+09 0.28 -124.24 2.60 96.68 7.35e-02 18.35 0.32 -49.43 1.8e+09 0.28 -126.59 2.47 95.44 7.39e-02 17.79 0.31 -49.40 1.9e+09 0.27 -128.76 2.34 94.29 7.42e-02 17.30 0.30 -49.38 2.0e+09 0.27 -130.77 2.23 93.19 7.45e-02 16.88 0.30 -49.36 2.1e+09 0.26 -132.63 2.13 92.16 7.47e-02 16.52 0.29 -49.35 2.2e+09 0.26 -134.35 2.04 91.18 7.50e-02 16.20 0.28 -49.35 2.3e+09 0.26 -135.96 1.95 90.24 7.52e-02 15.92 0.28 -49.38 2.4e+09 0.25 -137.46 1.87 89.34 7.55e-02 15.68 0.28 -49.42 2.5e+09 0.25 -138.86 1.80 88.48 7.57e-02 15.48 0.27 -49.49 2.6e+09 0.25 -140.17 1.73 87.65 7.59e-02 15.30 0.27 -49.56 2.7e+09 0.25 -141.39 1.67 86.85 7.61e-02 15.15 0.26 -49.67 2.8e+09 0.25 -142.54 1.61 86.07 7.63e-02 15.01 0.26 -49.81 2.9e+09 0.24 -143.62 1.56 85.31 7.65e-02 14.90 0.26 -49.96 3.0e+09 0.24 -144.64 1.51 84.58 7.67e-02 14.81 0.26 -50.13 v ce = -5v, i c = -10ma 1.0e+08 0.58 -23.24 13.03 163.45 1.43e-02 73.38 0.93 -13.46 2.0e+08 0.53 -44.07 11.75 149.11 2.58e-02 60.43 0.85 -24.76 3.0e+08 0.48 -61.50 10.25 137.78 3.38e-02 50.16 0.74 -33.10 4.0e+08 0.43 -75.73 8.88 129.12 3.90e-02 42.49 0.65 -38.83 5.0e+08 0.40 -87.36 7.72 122.49 4.25e-02 36.81 0.58 -42.63 6.0e+08 0.37 -96.94 6.78 117.33 4.48e-02 32.59 0.51 -45.07 7.0e+08 0.35 -104.92 6.01 113.22 4.64e-02 29.39 0.47 -46.60 8.0e+08 0.33 -111.64 5.39 109.85 4.76e-02 26.94 0.43 -47.49 9.0e+08 0.32 -117.36 4.87 107.05 4.85e-02 25.04 0.40 -47.97 1.0e+09 0.31 -122.27 4.44 104.66 4.92e-02 23.55 0.37 -48.18 1.1e+09 0.30 -126.51 4.07 102.59 4.97e-02 22.37 0.35 -48.20 1.2e+09 0.30 -130.21 3.76 100.76 5.02e-02 21.44 0.33 -48.11 common emitter s-parameters of pnp 3 m x 50 m transistor (continued) freq. (hz) |s 11 | phase(s 11 )|s 21 | phase(s 21 )|s 12 | phase(s 12 )|s 22 |phase(s 22 )
HFA3046, hfa3096, hfa3127, hfa3128 fn3076 rev 15.00 page 8 of 14 august 11, 2015 1.3e+09 0.29 -133.46 3.49 99.14 5.06e-02 20.70 0.32 -47.95 1.4e+09 0.29 -136.33 3.25 97.67 5.09e-02 20.11 0.31 -47.77 1.5e+09 0.28 -138.89 3.05 96.33 5.12e-02 19.65 0.30 -47.58 1.6e+09 0.28 -141.17 2.87 95.10 5.15e-02 19.29 0.29 -47.39 1.7e+09 0.28 -143.21 2.70 93.96 5.18e-02 19.01 0.28 -47.23 1.8e+09 0.28 -145.06 2.56 92.90 5.21e-02 18.80 0.27 -47.09 1.9e+09 0.27 -146.73 2.43 91.90 5.23e-02 18.65 0.27 -46.98 2.0e+09 0.27 -148.26 2.31 90.95 5.26e-02 18.55 0.26 -46.91 2.1e+09 0.27 -149.65 2.20 90.05 5.28e-02 18.49 0.26 -46.87 2.2e+09 0.27 -150.92 2.10 89.20 5.30e-02 18.46 0.25 -46.87 2.3e+09 0.27 -152.10 2.01 88.37 5.33e-02 18.47 0.25 -46.90 2.4e+09 0.27 -153.18 1.93 87.59 5.35e-02 18.50 0.25 -46.97 2.5e+09 0.27 -154.17 1.86 86.82 5.38e-02 18.55 0.24 -47.07 2.6e+09 0.26 -155.10 1.79 86.09 5.40e-02 18.62 0.24 -47.18 2.7e+09 0.26 -155.96 1.72 85.38 5.42e-02 18.71 0.24 -47.34 2.8e+09 0.26 -156.76 1.66 84.68 5.45e-02 18.80 0.24 -47.55 2.9e+09 0.26 -157.51 1.60 84.01 5.47e-02 18.91 0.24 -47.76 3.0e+09 0.26 -158.21 1.55 83.35 5.50e-02 19.03 0.23 -48.00 common emitter s-parameters of pnp 3 m x 50 m transistor (continued) freq. (hz) |s 11 | phase(s 11 )|s 21 | phase(s 21 )|s 12 | phase(s 12 )|s 22 |phase(s 22 ) typical performance curves figure 1. npn collector current vs collector to emitter voltage figure 2. npn collector current and base current vs base to emitter voltage i b = 200a collector to emitter voltage (v) i b = 160a i b =120a i b = 80a i b = 40a 12345 0 25 20 15 10 5 collector current (ma) i b base to emitter voltage (v) v ce = 3v 0.60.70.80.91.0 100m 10m 1m 100 ? collector current i c 0.5 10 ? 1 ? 100n 10n 1n and base current (a)
HFA3046, hfa3096, hfa3127, hfa3128 fn3076 rev 15.00 page 9 of 14 august 11, 2015 figure 3. npn dc current gain vs collector current figure 4. npn g ain bandwidth product vs collector current (uhf 3 x 50 with bond pads) figure 5. pnp collector current vs collector to emitter voltage figure 6. pnp collector current and base current vs base to emitter voltage figure 7. pnp dc current gain vs collector current figure 8. pnp gain bandwidth product vs collector current (uhf 3 x 50 with bond pads) typical performance curves (continued) collector current (a) v ce = 3v 160 140 120 dc current gain 1 ? 100 80 60 40 20 0 10 ? 100 ? 1m 10m 100m collector current (ma) v ce = 1v 1.0 10 100 10.0 8.0 6.0 gain bandwidth product (ghz) 0.1 v ce = 5v v ce = 3v 4.0 2.0 0 i b = -400a collector to emitter voltage (v) i b = -80a -1 -2 -3 -4 -5 0 -25 -20 -15 -10 -5 collector current (ma) 0 i b = -320a i b = -240a i b = -160a base to emitter voltage (v) i b v ce = -3v -0.6 -0.7 -0.8 -0.9 -1.0 -100m -10m -1m -100 ? collector current i c -0.5 -10 ? -1 ? -100n -10n -1n and base current (a) collector current (a) 160 140 120 dc current gain -1 ? 100 80 60 40 20 0 -10 ? -100 ? -1m -10m -100m v ce = -3v collector current (ma) v ce = -5v 5.0 gain bandwidth product (ghz) 4.0 3.0 2.0 1.0 -0.1 -1.0 -10 -100 v ce = -3v v ce = -1v
HFA3046, hfa3096, hfa3127, hfa3128 fn3076 rev 15.00 page 10 of 14 august 11, 2015 die characteristics die dimensions: 53 mils x 52 mils 1340m x 1320m metallization: type: metal 1: alcu(2%)/tiw thickness: metal 1: 8k ? ? 0.4k ? type: metal 2: alcu(2%) thickness: metal 2: 16k ? 0.8k ? passivation: type: nitride thickness: 4k ? ? 0.5k ? process: uhf-1 substrate potential: (powered up) unbiased metallization mask layout hfa3096, hfa3127, hfa3128 HFA3046 pad numbers corres pond to soic pinout. 1 2 3 4 5 6 78 910 11 12 13 14 15 16 1320m (52 mils) 1340m (53 mils) 1 2 3 4 5 6 78 9 10 11 12 13 14 1320m (52 mils) 1340m (53 mils)
fn3076 rev 15.00 page 11 of 14 august 11, 2015 HFA3046, hfa3096, hfa3127, hfa3128 intersil products are manufactured, assembled and tested utilizing iso9001 quality systems as noted in the quality certifications found at www.intersil.com/en/suppor t/qualandreliability.html intersil products are sold by description on ly. intersil may modify the circuit design an d/or specifications of products at any time without notice, provided that such modification does not, in intersil's sole judgment, affect the form, fit or function of the product. accordingly, the reader is cautioned to verify that datasheets are current before placing orders. information fu rnished by intersil is believed to be accu rate and reliable. however, no responsib ility is assumed by intersil or its subsidiaries for its use; nor for any infrin gements of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiaries. for information regarding intersil corporation and its products, see www.intersil.com for additional products, see www.intersil.com/en/products.html ? copyright intersil americas llc 1998-2015. all rights reserved. all trademarks and registered trademarks are the property of their respective owners. about intersil intersil corporation is a leading provider of innovative power management and precision analog so lutions. the company's produc ts address some of the largest markets within t he industrial and infrastructure , mobile computing and high-end consumer markets. for the most updated datasheet, application notes, related documentation and related parts, please see the respective product information p age found at www.intersil.com . you may report errors or suggesti ons for improving this datashe et by visiting www.intersil.com/ask . reliability reports are also av ailable from our website at www.intersil.com/support revision history the revision history provided is for informational purposes onl y and is believed to be accurate, but not warranted. please go to the web to make sure that you have the latest revision. date revision change august 11, 2015 fn3076.15 added revision history beginning with rev 15. updated ordering information table with ?no longer available or supported? next to hfa3128 part numbers
HFA3046, hfa3096, hfa3127, hfa3128 fn3076 rev 15.00 page 12 of 14 august 11, 2015 package outline drawing m14.15 14 lead narrow body small outline plastic package rev 1, 10/09 a d 4 0.25 a-b mc c 0.10 c 5 b d 3 0.10 a-b c 4 0.20 c 2x 2x 0.10 d c 2x h 0.10 c 6 3 6 id mark pin no.1 (0.35) x 45 seating plane gauge plane 0.25 (5.40) (1.50) 1.27 0.31-0.51 4 4 detail"a" 0.220.03 0.10-0.25 1.25 min 1.75 max (1.27) (0.6) 6.0 8.65 3.9 7 14 8 dimensioning and tolerancing conform to amsey14.5m-1994. dimension does not include interlead flash or protrusions. dimensions in ( ) for reference only. interlead flash or protrusions shall not exceed 0.25mm per side . datums a and b to be determined at datum h. 4. 5. 3. 2. dimensions are in millimeters. notes: 1. the pin #1 indentifier may be either a mold or mark feature. 6. does not include dambar protrusion. allowable dambar protrusi on 7. reference to jedec ms-012-ab. shall be 0.10mm total in excess of lead width at maximum condit ion. detail "a" side view typical recommended land pattern top view
HFA3046, hfa3096, hfa3127, hfa3128 fn3076 rev 15.00 page 13 of 14 august 11, 2015 small outline plast ic packages (soic) notes: 1. symbols are defined in the mo series symbol list in section 2.2 of publication number 95. 2. dimensioning and tolerancing per ansi y14.5m - 1982. 3. dimension d does not include mold flash, protrusions or gat e burrs. mold flash, protrusion and gate burrs shall not exceed 0.15mm ( 0.006 inch) per side. 4. dimension e does not include interlead flash or protrusions . interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per side. 5. the chamfer on the body is optional. if it is not present, a visual index feature must be located within the crosshatched area. 6. l is the length of terminal for soldering to a substrate. 7. n is the number of terminal positions. 8. terminal numbers are shown for reference only. 9. the lead width b, as measured 0.36mm (0.014 inch) or greate r above the seating plane, shall not exceed a maximum value of 0.61mm (0.024 inch). 10. controlling dimension: millimeter. converted inch dimensions are not necessarily exact. index area e d n 123 -b- 0.25(0.010) c a m bs e -a- l b m -c- a1 a seating plane 0.10(0.004) h x 45 c h 0.25(0.010) b m m ? m16.15 (jedec ms-012-ac issue c) 16 lead narrow body small outline plastic package symbol inches millimeters notes min max min max a 0.0532 0.0688 1.35 1.75 - a1 0.0040 0.0098 0.10 0.25 - b 0.013 0.020 0.33 0.51 9 c 0.0075 0.0098 0.19 0.25 - d 0.3859 0.3937 9.80 10.00 3 e 0.1497 0.1574 3.80 4.00 4 e 0.050 bsc 1.27 bsc - h 0.2284 0.2440 5.80 6.20 - h 0.0099 0.0196 0.25 0.50 5 l 0.016 0.050 0.40 1.27 6 n16 167 ? 0 8 0 8 - rev. 1 6/05
HFA3046, hfa3096, hfa3127, hfa3128 fn3076 rev 15.00 page 14 of 14 august 11, 2015 package outline drawing l16.3x3 16 lead quad flat no-lead plastic package rev 2, 4/07 located within the zone indicate d. the pin #1 indentifier may b e unless otherwise specified, t olerance : decimal 0.05 tiebar shown (if present) i s a non-functional feature. the configuration of the pin #1 identifier is optional, but mus t be between 0.15mm and 0.30mm from the terminal tip. dimension b applies to the metallized terminal and is measured dimensions in ( ) for reference only. dimensioning and tolerancing c onform to amse y14.5m-1994. 6. either a mold or mark feature. 3. 5. 4. 2. dimensions are in millimeters. 1. notes: bottom view detail "x" typical recomme nded land pattern top view bottom view side view ( 2. 80 typ ) ( 1. 50 ) (4x) 0.15 6 pin 1 index area 3.00 0 . 00 min. 0 . 05 max. ( 16x 0 . 60) ( 16x 0 . 23 ) c 0 . 2 ref 5 16x 0.40 0.10 0 . 90 0.1 ( 12x 0 . 5 ) 3.00 9 8 b a 12 1.5 12x 0.50 4x 13 seating plane 0.08 c see detail "x" base plane c 0.10 16x 0.23 0.10 5 4 4 - 0.05 + 0.07 b c ma 1 .50 0 . 15 c pin #1 index area 1 16 6

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